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BFX89

Comset Semiconductors
Part Number BFX89
Manufacturer Comset Semiconductors
Description WIDE BAND VHF/UHF AMPLIFIER
Published Dec 10, 2012
Detailed Description BFX89 – BFY90 WIDE BAND VHF/UHF AMPLIFIER DESCRIPTION : • • • SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY...
Datasheet PDF File BFX89 PDF File

BFX89
BFX89

Overview
BFX89 – BFY90 WIDE BAND VHF/UHF AMPLIFIER DESCRIPTION : • • • SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : • • • TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry.
They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz.
They feature very high fT, low reverse capacitance, excellent cross modulation properties and very low noise performance.
The BFY90 is complementary to the BFR99A.
Typical applications include telecommunication and radio communication equipment.
www.
DataSheet.
net/ ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCER VCBO VEBO IC ICM Ptot Tstg, Tj Ratings Collector-Emitter Voltage ( IB = 0) Collector-Emitter Voltage ( RBE ≤50Ω ) Collector-Base Voltage ( IE= 0) Collector-Base Voltage ( IC = 0) Collector Current Collector Peak Current Total Power Dissipation at Tamb ≤ 25 °C Storage and Junction Temperature Value 15 30 30 2.
5 25 50 200 -65 to 200 Unit V V V V mA mA mW °C 25/10/2012 COMSET SEMICONDUCTORS 1/4 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ BFX89 – BFY90 THERMAL CHARACTERISTICS Symbol RthJ-C RthJ- Ratings Thermal Resistance, Junction – Case Thermal Resistance, Junction – ambient Max Max Value 580 880 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS Tamb = 25°C unless otherwise specified Symbol ICBO VCEK* Ratings Collector Cutoff Current (IE=0) Collector-emitter Knee Voltage Test Condition(s) VCB = 15V IC = 20mA VCE = 5V f = 500MHZ IC =2 mA VCE = 5V f = 500MHZ IC =25 mA IC= 2mA VCE= 1 V www.
DataSheet.
net/ Min - Typ 1 1.
1 1.
2 1.
4 0.
6 0.
6 Max 10 0.
75 - Unit nA V BFX89 BFY90 BFX89 BFY90 BFX89 BFY90 1 1.
3 20 25 20 25 - fT Transition Frequency GHz 150 150 125 125 1.
7 1.
5 pF BFY90 0.
8 pF hFE DC Current Gain IC= 25mA VCE= 1 V Collector-base Capacitance IE =0 VCB = 10V f= 1MHZ VCE= 5 IC= 2mAV f = 1MHZ BFX89 BFY90 BFX89 BFY90 BFX89 CC...


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