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TIC236N

Comset Semiconductors
Part Number TIC236N
Manufacturer Comset Semiconductors
Description (TIC236x) SILICON TRIACS
Published Dec 12, 2012
Detailed Description SEMICONDUCTORS TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M, TIC236N, TIC236S SILICON TRIACS • • • • • • High c...
Datasheet PDF File TIC236N PDF File

TIC236N
TIC236N

Overview
SEMICONDUCTORS TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M, TIC236N, TIC236S SILICON TRIACS • • • • • • High current triacs 12 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A VDRM IT(RMS) ITSM IGM TC Tstg TL Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.
6 mm from case for 10 seconds http://www.
DataSheet4U.
net/ Symbol Ratings B C Unit M S N V A A A °C °C °C D E 100 200 300 400 500 600 700 800 12 100 ±1 -40 to +110 -40 to +125 230 THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance Value ≤2 ≤ 62.
5 Unit °C/W 02/10/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.
DataSheet4U.
net/ SEMICONDUCTORS TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M, TIC236N, TIC236S ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Repetitive peak off-state current Gate trigger current Test Condition(s) VD = Rated VDRM, , IG = 0 TC = 110°C Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, IG = 0 initiating ITM = 100 mA http://www.
DataSheet4U.
net/ Min ±1.
2 Typ 12 -19 -16 34 0.
8 -0.
8 -0.
8 0.
9 22 -22 ±1.
4 ±400 ±100 ±9 Max ±2 50 -50 -50 2 -2 -2 2 40 Unit mA IGT mA VGT Gate trigger voltage V IH Holding current IL VTM dv/dt di/dt dv/dt© Latching current Peak on-state voltage Critical rate of rise of ...


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