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2N6518

Part Number	2N6518
Manufacturer	Fairchild Semiconductor
Description	PNP Epitaxial Silicon Transistor
Published	Mar 22, 2005
Detailed Description	2N6518 2N6518 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -250V • Collector Dissipation: PC (max)=625mW ...
Datasheet	2N6518 PDF File

Overview

2N6518 2N6518 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -250V • Collector Dissipation: PC (max)=625mW • Complement to 2N6515 1 TO-92 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Derate above 25°C Junction Temperature Storage Temperature 1.
Emitter 2.
Base 3.
Collector Value -250 -250 -5 -500 -250 625 5 150 -55 ~ 150 Units V V V mA mA mW mW/°C °C °C • Refer to 2N6520 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BV...

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