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K210

Toshiba Semiconductor
Part Number K210
Manufacturer Toshiba Semiconductor
Description 2SK210
Published Jun 4, 2013
Detailed Description 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier ...
Datasheet PDF File K210 PDF File

K210
K210

Overview
2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications • • • High power gain: GPS = 24dB (typ.
) (f = 100 MHz) Low noise figure: NF = 1.
8dB (typ.
) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 mS (typ.
) (f = 1 kHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating −18 10 100 125 −55~125 Unit V mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA SC-59 temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
TOSHIBA 2-3F1C operating temperature/current/voltage, etc.
) are within the Weight: 0.
012 g (typ.
) absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
http://www.
DataSheet4U.
net/ Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Symbol IGSS V (BR) GDO IDSS (Note) VGS (OFF) ⎪Yfs⎪ Ciss Crss GPS NF Test Condition VGS = −1.
0 V, VDS = 0 V IG = −100 μA VGS = 0 V, VDS = 10 V VDS = 10 V, ID = 1 μA VGS = 0 V, VDS = 10 V, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VGD = −10 V, f = 1 MHz VDD = 10 V, f = 100 MHz (Figure 1) VDD = 10 V, f = 100 MHz (Figure 1) Min ⎯ −18 3 −1.
2 ⎯ ⎯ ⎯ ⎯ ⎯ Typ.
⎯ ⎯ ⎯ −3 7 3.
5 ⎯ 24 1.
8 Max −10 ⎯ 24 ⎯ ⎯ ⎯ 0.
65 ⎯ 3.
5 Unit nA V mA V mS pF pF dB dB Note: IDSS classificatopn Y: 3.
0~7.
0 mA, GR (R): 6.
0~14.
0 mA, BL (L): 12.
0~24.
0 mA ...


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