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2SA1020

Part Number	2SA1020
Manufacturer	Toshiba Semiconductor
Description	PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applica...
Datasheet	2SA1020 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.
0 μs (typ.
) • Complementary to 2SC2655 2SA1020 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −50 V −50 V −5 V −2 A −0.
2 A 900 mW 150 °C −55 to 150 °C JE...

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