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2SA1049

Toshiba Semiconductor
Part Number 2SA1049
Manufacturer Toshiba Semiconductor
Description Silicon PNP Epitaxial Type Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1049 2SA1049 Audio Frequency Amplifier Applications Un...
Datasheet PDF File 2SA1049 PDF File

2SA1049
2SA1049

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1049 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package.
• High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.
1 mA)/hFE (IC = −2 mA) = 0.
95 (typ.
) • Low noise: NF = 1dB (typ.
), 10dB (max) • Complementary to 2SC2459.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Base current IB −20 mA JEDEC ― Collector power dissipation PC 200 mW JEITA ― Junction temperature Storage temperature range Tj 125 °C Tstg −55~125 °C TOSHIBA 2-4E1A Weight: 0.
13 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure ICBO VCB = −120 V, IE = 0 IEBO VEB = −5 V, IC = 0 hFE (Note) VCE = −6 V, IC = −2 mA VCE (sat) fT Cob NF IC = −10 mA, IB = −1 mA VCE = −6 V, IC = −1 mA VCB = −10 V, IE = 0, f = 1 MHz VCE = −6 V, IC = −0.
1 mA f = 1 kHz, RG = 10 kΩ Note: hFE classification GR: 200~400, BL: 350~700 Min Typ.
Max Unit ⎯ ⎯ −0.
1 μA ⎯ ⎯ −0.
1 μA 200 ⎯ 700 ⎯ ⎯ −0.
3 V ⎯ 100 ⎯ MH...


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