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2SA1193

Hitachi Semiconductor
Part Number 2SA1193
Manufacturer Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Published Mar 22, 2005
Detailed Description 2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Col...
Datasheet PDF File 2SA1193 PDF File

2SA1193
2SA1193

Overview
2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1.
Emitter 2.
Collector 3.
Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –60 –60 –7 –0.
5 –1.
0 0.
9 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 — — 2000 — — — — Typ — — — — — — 0.
3 0.
9 Max — –1.
0 –1.
0 — –1.
5 –2.
0 — — V V µs µs I C = –250 mA I B1 = –IB2 = –0.
5 mA Unit V µA µA Test conditions I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –250 mA*1 I C = –250 mA, IB = –0.
5 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to e...


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