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2SA1194

Hitachi Semiconductor
Part Number 2SA1194
Manufacturer Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Published Mar 22, 2005
Detailed Description 2SA1194(K) Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. B...
Datasheet PDF File 2SA1194 PDF File

2SA1194
2SA1194

Overview
2SA1194(K) Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1.
Emitter 2.
Collector 3.
Base 1 2 3 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1.
Value at TC = 25°C Tj Tstg 1 Rating –60 –60 –7 –1 –2 1 8 150 –55 to +150 Unit V V V A A W W °C °C 2SA1194(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 — — 1000 — — — — Typ — — — — — — 0.
7 0.
8 Max — –1.
0 –1.
0 — –2.
0 –2.
0 — — V V µs µs I C = –500 mA I B1 = –IB2 = –1 mA Unit V µA µA Test conditions I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –500 mA*1 I C = –500 mA, IB = –1 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter satur...


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