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2SA1425

Part Number	2SA1425
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1425 Power Amplifier Applications Driver-Stage Amplifier ...
Datasheet	2SA1425 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1425 Power Amplifier Applications Driver-Stage Amplifier Applications 2SA1425 Unit: mm • Complementary to 2SC3665.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −80 mA Collector power dissipation PC 1000 mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in JEI...

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