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2SA1428

Part Number	2SA1428
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1428 Power Amplifier Applications Power Switching Applica...
Datasheet	2SA1428 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1428 Power Amplifier Applications Power Switching Applications 2SA1428 Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.
0 μs (typ.
) • Complementary to 2SC3668 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −2 A Base current IB −0.
2 A JEDEC ― Collector power dissipation PC 1000 mW JEITA ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-7D101A...

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