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2SA1474

Sanyo Semicon Device
Part Number 2SA1474
Manufacturer Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Published Mar 22, 2005
Detailed Description Ordering number:EN2526 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1474/2SC3780 Ultrahigh-Definition CRT Display Vi...
Datasheet PDF File 2SA1474 PDF File

2SA1474
2SA1474

Overview
Ordering number:EN2526 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1474/2SC3780 Ultrahigh-Definition CRT Display Video Output Applications Applications · Video Output.
· Color TV chroma output.
· Wide-band amp.
Features · High fT (fT typ=800MHz).
· Small reverse transfer capacitance and excellent high frequency characteristic : Cre=3.
0pF (NPN), 4.
7pF (PNP).
· Complementary PNP and NPN types.
· Adoption of FBET process.
Package Dimensions unit:mm 2010C [2SA1474/2SC3780] ( ) : 2SA1474 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=50˚C JEDEC : TO-220AB EIAJ : SC-46 E : Emitter C : Collector B : Base Conditions Ratings (–)80 (–)60 (–)4 (–)800 (–)1 1.
5 15 150 –55 to +150 Unit V V V mA A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE1 hFE2 fT VCE(sat) VCB=(–)60V, IE=0 VEB=(–)2V, IC=0 VCE=(–)10V, IC=(–)50mA VCE=(–)10V, IC=(–)400mA VCE=(–)10V, IC=(–)100mA IC=(–)100mA, IB=(–)10mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Output Capacitance VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob IC=(–)100mA, IB=(–)10MA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)100µA, IC=0 VCB=(–)30V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)30V, f=1MHz *: The 2SA1474/2SC3780 are classified by 50mA hFE as follows : 40 C 80 60 D 120 100 E 200 160 F 320 Ratings min typ 40* 20 800 (–)80 (–)60 (–)4 3.
5 (5.
3) 3.
0 (4.
7) max (–)0.
1 (–)1.
0 320* 0.
6 (–0.
8) (–)1.
0 Unit µA µA MHz V V V V V V pF pF pF pF SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters TOKYO OFFIC...


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