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2SA1618

Toshiba Semiconductor
Part Number 2SA1618
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1618 Audio Frequency General Purpose Amplifier Applicatio...
Datasheet PDF File 2SA1618 PDF File

2SA1618
2SA1618

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1618 Audio Frequency General Purpose Amplifier Applications 2SA1618 Unit: mm  Small package (dual type)  High voltage and high current: VCEO = −50 V, IC = −150 mA (max)  High hFE: hFE = 120 to 400  Excellent hFE linearity: hFE (IC = −0.
1 mA)/ hFE (IC = −2 mA) = 0.
95 (typ.
)  Complementary to 2SC4207 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO 50 V VCEO 50 V VEBO 5 V IC 150 mA IB 30 mA PC 300 mW (Note 3) Tj (Note 1) 150 °C Tj (Note 2) 125 Tstg (Note 1) 55 to 150 °C Tstg (Note 2) 55 to 125 JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 0.
014 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the...


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