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2SA1621

Toshiba Semiconductor
Part Number 2SA1621
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications • High ...
Datasheet PDF File 2SA1621 PDF File

2SA1621
2SA1621


Overview
2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • Complementary to 2SC4210 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −35 V −30 V −5 V −800 mA −160 mA 200 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may ca...



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