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2SA1810

Hitachi Semiconductor
Part Number 2SA1810
Manufacturer Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Published Mar 22, 2005
Detailed Description 2SA1810 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics...
Datasheet PDF File 2SA1810 PDF File

2SA1810
2SA1810

Overview
2SA1810 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.
0 pF typ • Suitable for wide band video amplifier Outline TO-126 MOD 1 1.
Emitter 2.
Collector 3.
Base 2 3 2SA1810 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Tj Tstg 1 Ratings –200 –200 –5 –0.
2 –0.
5 1.
25 10 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –200 –200 –5 — 1 Typ — — — — — — — 300 5.
0 Max — — — –10 200 –1.
0 –1.
0 — — Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, IC = –10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: B 60 to 120 V(BR)EBO I CBO hFE* VBE VCE(sat) fT Cob 60 — — 200 — V V MHz pF VCE = –5 V, IC = –30 mA I C = –30 mA, IB = –3 mA VCE = –20 V, IC = –30 mA VCB = –30 V, IE = 0, f = 1 MHz 1.
The 2SA1810 is grouped by hFE as follows.
C 100 to 200 2 2SA1810 Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) –1.
0 –0.
5 8 Collector Current IC (A) 1 Shot pulse Ta = 25°C Area of Safe Operation –0.
2 –0.
1 –0.
05 ms 10 n = tio PW era Op 5°C) DC = 2 (T C 4 –0.
02 –0.
01 –10 0 50 100 Case Temperature TC (°C) 150 –20 –50 –100 –200 –500 –1000 Collector to emitter Voltage VCE (V) Typical Output Characteristics –200 TC = 25°C DC Current Transfer Ratio vs.
Collector Current 1,000 DC curren...


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