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UPA2763

Part Number	UPA2763
Manufacturer	Renesas
Description	MOS FIELD EFFECT TRANSISTOR
Published	Sep 17, 2013
Detailed Description	Preliminary Data Sheet μ PA2763 MOS FIELD EFFECT TRANSISTOR Description R07DS0003EJ0100 Rev.1.00 May 31, 2010 The μ P...
Datasheet	UPA2763 PDF File

Overview

Preliminary Data Sheet μ PA2763 MOS FIELD EFFECT TRANSISTOR Description R07DS0003EJ0100 Rev.
1.
00 May 31, 2010 The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications.
Features • Low on-state resistance ⎯ RDS(on)1 = 23.
0 mΩ MAX.
(VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.
0 mΩ MAX.
(VGS = 8 V, ID = 21 A) • Low Ciss 2100 pF TYP.
• Built-in gate protection diode • Thin type surface mount package with heat spreader (8-pin HVSON) • RoHS Compliant Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation...

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