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2SA1981S

Part Number	2SA1981S
Manufacturer	AUK corp
Description	PNP Silicon Transistor
Published	Mar 22, 2005
Detailed Description	Semiconductor 2SA1981S PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : h...
Datasheet	2SA1981S PDF File

Overview

Semiconductor 2SA1981S PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344S Ordering Information Type NO.
2SA1981S Marking EA : hFE rank Package Code SOT-23 Outline Dimensions 2.
4±0.
1 1.
30±0.
1 unit : mm 1 1.
90 Typ.
3 2 0.
4 Typ.
0.
45~0.
60 0.
2 Min.
1.
12 Max.
2.
9±0.
1 KST-2005-001 0.
124 PIN Connections 1.
Base 2.
Emitter 3.
Collector 0.
38 0~0.
1 -0.
03 +0.
05 1 2SA1981S Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -35 -30 -5 -800 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE fT Cob * Test Condition IC=-500µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA IC=-500mA, IB=-20mA VCE=-5V, IE=10mA VCB=-10V, IE=0, f=1MHz Min.
Typ.
Max.
-35 -30 -5 100 120 19 -0.
1 -0.
1 320 -0.
5 - Unit V V V µA µA V MHz pF VCE(sat) * : hFE rank / O : 100~200, Y : 160~320 KST-2005-001 2 2SA1981S Electrical Characteristic Curves Fig.
1 Pc-Ta Fig.
2 IC -VBE Fig.
3 IC - VCE Fig.
4 hFE - IC Fig.
5 VCE(SAT) - IC KST-2005-001 3 ...

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