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2SC6124

Part Number	2SC6124
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Oct 15, 2013
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Power Switching Applications 2SC6124...
Datasheet	2SC6124 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Power Switching Applications 2SC6124 Unit: mm Low collector emitter saturation voltage : VCE (sat) = 0.
5 V (Max) High-speed switching: tstg = 400 ns (Typ.
) Complementary to 2SA2206 (IC = 1 A) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse t = 10 s DC VCBO VCEX VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg 160 V 160 V 80 V 7 V 2 A 4 A 0.
5 A 2.
5 W 1.
0 150 °C −55 to 150 °C 1 : BASE 2 ...

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