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2SC6126

Part Number	2SC6126
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Oct 15, 2013
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 2SC6126 High-Speed Switching Applications DC-DC Converter Applic...
Datasheet	2SC6126 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 2SC6126 High-Speed Switching Applications DC-DC Converter Applications LCD Backlighting Applications Unit : mm ･ High DC current gain: hFE = 250 to 400 (IC= 0.
3 A) ･ Low collector-emitter saturation: VCE(sat) = 0.
18 V (max) ･ High-speed switching: tf = 40 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEX 120 V VCEO 50 V Emitter-base voltage VEBO 6 V DC IC Collector current (Note1) Pulse ICP 3 A 5 Base current IB 1.
5 A Collector power dissipation DC PC 1.
0 t = 10 s (Note2) 2.
5 W Junction temperature Tj...

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