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2SC6133

Toshiba
Part Number 2SC6133
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Oct 15, 2013
Detailed Description 2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications DC-DC Converter Applica...
Datasheet PDF File 2SC6133 PDF File

2SC6133
2SC6133

Overview
2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 2.
1±0.
1 1.
7±0.
1 +0.
1 0.
3 -0.
05 3 0.
166±0.
05 • • Low collector-emitter saturation voltage: VCE (sat) = 0.
12 V (max) High-speed switching: tf = 45 ns (typ.
) 2.
0±0.
1 • High DC current gain: hFE = 400 to 1000 (IC = 0.
15A) 0.
65±0.
05 0.
7±0.
05 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PＣ (Note1) PＣ (Note2) Junction temperature Storage temperature range Tj Tstg Rating 40 30 20 7 1.
5 2.
5 150 800 500 150 −55 to 150 Unit V V V V A mA mW °C °C 1 :Gate 2 :Source 3 :Drain UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A Weight: 6.
6 mg (typ.
) Note1: Note2: Note3: Mounted on ceramic board.
(25.
4 mm × 25.
4 mm × 0.
8 mm, Cu Pad: 645 mm2 ) Mounted on FR4 board.
(...


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