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2SA1417

Part Number	2SA1417
Manufacturer	TY Semiconductor
Description	Transistor
Published	Oct 25, 2013
Detailed Description	SMD Type Product specification 2SA1417 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Curr...
Datasheet	2SA1417 PDF File

Overview

SMD Type Product specification 2SA1417 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.
8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating -120 -100 -6 -2 -3 500 1.
5 150 -55 to +150 Unit V V V A A mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Testconditons VCB = -100V , IE = 0 VEB = -4V , IC = 0 -120 -100 -6 100 -0.
22 -0.
85 ...

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