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2N3565

Fairchild Semiconductor
Part Number 2N3565
Manufacturer Fairchild Semiconductor
Description NPN General Purpose Amplifier
Published Mar 23, 2005
Detailed Description PN3565 Discrete POWER & Signal Technologies PN3565 C BE TO-92 NPN General Purpose Amplifier This device is designe...
Datasheet PDF File 2N3565 PDF File

2N3565
2N3565

Overview
PN3565 Discrete POWER & Signal Technologies PN3565 C BE TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA.
Sourced from Process 10.
See PN100 for characteristics.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 25 30 6.
0 500 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN3565 625 5.
0 83.
3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation PN3565 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current I C = 2.
0 mA, I B = 0 I C = 100 µA, I E = 0 I E = 10 µA, I C = 0 VCB = 25 V, IE = 0 25 30 6.
0 50 V V V nA ON CHARACTERISTICS* hFE VCE( sat) DC Current Gain Collector-Emitter Saturation Voltage VCE = 10 V, IC = 1.
0 mA IC = 1.
0 mA, I B = 0.
1 mA 150 600 0.
35 V SMALL SIGNAL CHARACTERISTICS Cob hie hoe hfe Output Capacitance Input Impedance Output Admittance Small-Signal Current Gain VCB = 5.
0 V I C = 1.
0 mA, VCE = 5.
0 V, f = 1.
0 kHz I ...


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