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2SA1611

SeCoS
Part Number 2SA1611
Manufacturer SeCoS
Description PNP Silicon Plastic Encapsulated Transistor
Published Oct 25, 2013
Detailed Description 2SA1611 Elektronische Bauelemente -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suf...
Datasheet PDF File 2SA1611 PDF File

2SA1611
2SA1611

Overview
2SA1611 Elektronische Bauelemente -0.
1A , -60V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 A 3 SOT-323 L 3 Top View C B 1 2 2 CLASSIFICATION OF hFE Product-Rank Range Marking Product-Rank Range Marking 2SA1611-M4 90~180 M4 2SA1611-M6 200~400 M6 2SA1611-M5 135~270 M5 2SA1611-M7 300~600 M7 F K 1 E D G REF.
A B C D E F Millimeter Min.
Max.
1.
80 2.
20 1.
80 2.
45 1.
15 1.
35 0.
80 1.
10 1.
20 1.
40 0.
20 0.
40 H J Millimeter Min.
Max.
0.
100 REF.
0.
525 REF.
0.
08 0.
25 0.
650 TYP.
REF.
G H J K L PACKAGE INFORMATION Package SOT-323 MPQ 3K LeaderSize 7’ inch  Base Collector   Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Ratings -60 -50 -5 -100 150 833 150, -55~150 Unit V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector to Emitter Saturation Voltage Collector to Emitter Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Min.
-60 -50 -5 90 -0.
58 - Typ.
180 4.
5 Max.
-100 -100 600 -0.
3 -0.
68 - Unit V V V nA nA Test Conditions IC= -100A, IE=0 IC= -1mA, IB=0 IE= -100A, IC=0 VCB= -60V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA V V MHz pF IC= -100mA, IB= -10mA VCE= -6V, IC= -1mA VCE= -6V, IC= -10mA VCB= -10V, IE=0, f=1MHz *Pulse test：pulse width ≦ 350s, duty cycle ≦ 2.
0%.
http://www.
SeCoSGmbH.
com/ Any changes of specification will not be in...


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