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2SB855

Inchange Semiconductor
Part Number 2SB855
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Oct 25, 2013
Detailed Description isc Silicon PNP Power Transistor 2SB855 DESCRIPTION ·Collector Current: IC= -2A ·Low Collector Saturation Voltage : VC...
Datasheet PDF File 2SB855 PDF File

2SB855
2SB855

Overview
isc Silicon PNP Power Transistor 2SB855 DESCRIPTION ·Collector Current: IC= -2A ·Low Collector Saturation Voltage : VCE(sat)= -1.
2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 20 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA ; IE= 0...


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