DatasheetsPDF.com

2SB857

Part Number	2SB857
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Oct 25, 2013
Detailed Description	isc Silicon PNP Power Transistor 2SB857 DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VC...
Datasheet	2SB857 PDF File

Overview

isc Silicon PNP Power Transistor 2SB857 DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.
0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1133 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ ...

Similar Datasheet

2SB800 PNP SILICON EPITAXIAL TRANSISTOR - NEC
2SB800 Transistor - Kexin
2SB800 Transistor - TY Semiconductor
2SB804 PNP SILICON EPITAXIAL TRANSISTOR - NEC
2SB804 Transistor - Kexin
2SB804 Transistor - TY Semiconductor
2SB805 PNP SILICON EPITAXIAL TRANSISTOR - NEC
2SB805 Transistor - Kexin
2SB805 Transistor - TY Semiconductor
2SB806 PNP SILICON EPITAXIAL TRANSISTOR - NEC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)