DatasheetsPDF.com

AP9997GM

Advanced Power Electronics
Part Number AP9997GM
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 26, 2013
Detailed Description AP9997GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Single Drive Require...
Datasheet PDF File AP9997GM PDF File

AP9997GM
AP9997GM

Overview
AP9997GM RoHS-compliant Product Advanced Power Electronics Corp.
▼ Fast Switching Characteristic ▼ Single Drive Requirement ▼ Surface Mount Package D1 G2 D2 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S2 G1 95V 110mΩ 3A SO-8 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial -industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 95 ±20 3 2.
3 20 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.
5 Unit ℃/W Data and specifications subject to change without notice 1 200803063 Free Datasheet http://www.
datasheet4u.
com/ AP9997GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=3A VGS=4.
5V, ID=2A Min.
95 1 - Typ.
3 14 1.
5 5.
5 4.
5 7 18 6 450 65 50 Max.
Units 110 165 3 25 100 ±100 22 720 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=80V, VGS=0V VDS=80V ,VGS=0V VGS= ±20V ID=3A VDS=80V VGS=10V VDS=50V ID=1A RG=3.
3Ω,VGS=10V RD=50Ω VGS=0V VDS=25V f=1.
0MHz Gate-Source Leakage Total Gate Charge 2...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)