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2SB1169A

Panasonic
Part Number 2SB1169A
Manufacturer Panasonic
Description Power Transistors
Published Oct 29, 2013
Detailed Description Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm ■ Features • H...
Datasheet PDF File 2SB1169A PDF File

2SB1169A
2SB1169A

Overview
Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
7.
0±0.
3 3.
0±0.
2 2.
0±0.
2 3.
5±0.
2 0˚ to 0.
15˚ 2.
5±0.
2 (1.
0) ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1169 2SB1169A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −5 −1 −2 15 1.
3 150 −55 ∼ +150 °C °C V A A W V ...


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