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2SC3356

Inchange Semiconductor
Part Number 2SC3356
Manufacturer Inchange Semiconductor
Description Silicon NPN Transistor
Published Oct 29, 2013
Detailed Description isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga...
Datasheet PDF File 2SC3356 PDF File

2SC3356
2SC3356

Overview
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.
1 dB TYP.
, Ga = 11 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.
0 GHz ·High Power Gain MAG = 13 dB TYP.
@VCE = 10 V, IC = 20 mA, f = 1.
0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.
0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.
1 A 0.
2 W 150 ℃...


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