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2SC3356

SeCoS
Part Number 2SC3356
Manufacturer SeCoS
Description NPN Transistor
Published Oct 29, 2013
Detailed Description Elektronische Bauelemente 2SC3356 NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” ...
Datasheet PDF File 2SC3356 PDF File

2SC3356
2SC3356

Overview
Elektronische Bauelemente 2SC3356 NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES  Low Noise Amplifier at VHF, UHF and CATV band  Low Noise and High Gain  High Power Gain Collector  SOT-23 A L 3 Top View CB 12 KE 1 3 2  Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) F REF.
A B C D E F PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC Pc TJ, TSTG RATINGS 20 12 3 0.
1 0.
25 +150, -55 ~ +150 D G H Millimeter Min.
2.
80 2.
25 1.
20 Max.
3.
00 2.
55 1.
40 0.
90 1.
15 1.
80 2.
00 0.
30 0.
50 REF.
G H J K L J Millimeter Min.
Max.
0.
10 REF.
0.
55 REF.
0.
08 0.
15 0.
5 REF.
0.
95 TYP.
UNIT V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL MIN.
TYP.
MAX.
UNIT TEST CONDITIONS Collector-Base Breakdown Voltage V(BR)CBO 20 - - V IC=10μA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 12 - - V IC= 1mA, IB=0 Collector Cut-Off Current ICBO - - 1 μA VCB=10V, IE=0 Emitter Cut-Off Current IEBO - - 1 μA VEB= 1V, IC=0 DC Current Gain hFE* 50 - 250 VCE= 10V, IC=20mA Transition Frequency fT - 7 - GHz VCE=10V, IC= 20mA, Noise Figure NF - - 2 dB VCE=10V, IC= 7mA, f = 1GHz *Pulse Test: Pulse Width 350μs, Duty Cycle 2% CLASSIFICATION OF hFE MARKING RANK RANGE R23 Q 50-100 R24 R 80-160 R25 S 125-250 16-Oct-2009 Rev.
B Page 1 of 2 Elektronische Bauelemente TYPICAL CHARACTERISTICS (TA = 25°C) 2SC3356 NPN Silicon Plastic Encapsulated Transistor 16-Oct-2009 Rev.
B Page 2 of 2 ...


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