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AON6444

Alpha & Omega Semiconductors
Part Number AON6444
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 31, 2013
Detailed Description AON6444 60V N-Channel MOSFET SDMOS TM General Description The AON6444 is fabricated with SDMOSTM trench technology that ...
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AON6444
AON6444

Overview
AON6444 60V N-Channel MOSFET SDMOS TM General Description The AON6444 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.
The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 60V 81A < 6.
5mΩ < 8mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.
1mH C TC=25° C Power Dissipation B C Maximum 60 ±20 81 51 170 14 11 58 168 83 33 2.
3 1.
4 -55 to 150 Units V V A VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W ° C C TC=100° TA=25° C TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 55 1.
5 Units ° C/W ° C/W ° C/W Rev 1: November 2010 www.
aosmd.
com Page 1 of 7 Free Datasheet http://www.
datasheet4u.
com/ AON6444 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=60V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.
5 170 5.
4 9.
6 6.
4 75 0.
7 1 81 3800 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 330 110 0.
5 64 VGS=10V, VDS=30V, ID=20A 32 12 8 VGS=10V, VDS=30V, RL=1.
5Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 14 43 4800 470 190 1 80 40 15 14 13.
5 4.
...


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