DatasheetsPDF.com

2N3810L

Part Number	2N3810L
Manufacturer	Microsemi Corporation
Description	PNP SILICON DUAL TRANSISTOR
Published	Mar 23, 2005
Detailed Description	TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices 2N3810 2N3810L 2N3810U 2N3811 2N3811L...
Datasheet	2N3810L PDF File

Overview

TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices 2N3810 2N3810L 2N3810U 2N3811 2N3811L 2N3811U Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value 60 60 5.
0 50 One Both Section 1 Sections2 0.
5 0.
6 -65 to +200 Unit Vdc Vdc Vdc mAdc Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range 1) Derate linearly 2.
86 mW/0C for TA > +250C 2) Derate linearly 3.
43 mW/0C for TA > +250C PT TJ, Tstg 0 W C TO-78* *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min.
Max.
Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 10 µAdc Collector-Emitter Breakdown Current IC = 10 mAdc Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Base Cutoff Current VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 4.
0 Vdc V(BR)CBO V(BR)CEO V(...

Similar Datasheet

2N381 PNP Transistor - Motorola
2N3810 PNP Transistor - Semicoa Semiconductor
2N3810 PNP SILICON DUAL TRANSISTOR - Microsemi Corporation
2N3810 (2N3806 - 2N3811) Dual AMplifier Transistors - Motorola
2N3810 PNP Silicon Dual Amplifier Transistor - NES
2N3810 SILICON DUAL PNP TRANSISTORS - Central Semiconductor
2N3810A (2N3806 - 2N3811) Dual AMplifier Transistors - Motorola
2N3810A SILICON DUAL PNP TRANSISTORS - Central Semiconductor
2N3810A PNP Silicon Dual Amplifier Transistor - NES
2N3810DCSM DUAL HIGH GAIN PNP TRANSISTORS - Seme LAB

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)