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2N3866

Microsemi Corporation
Part Number 2N3866
Manufacturer Microsemi Corporation
Description RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS
Published Mar 23, 2005
Detailed Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 2N3866 / 2N3866A Features • Silicon NPN, To-39 packaged VHF/UHF Transist...
Datasheet PDF File 2N3866 PDF File

2N3866
2N3866

Overview
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 2N3866 / 2N3866A Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.
0 Watt - Minimum Gain = 10 dB - Efficiency = 45% • 800 MHz Current-Gain Bandwidth Product 1.
Emitter 2.
Base 3.
Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment.
Applications include amplifier; pre-driver, driver, and output stages.
Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation Derate above 25ºC Value 30 55 3.
5 400 5.
0 28.
6 Unit Vdc Vdc Vdc mA Watts mW/ ºC Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.
microsemi.
com or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol Test Conditions BVCER BVCEO BVCBO BVEBO ICEO ICEX (on) HFE VCE(sat) Collector-Emitter Breakdown Voltage (IC = 5.
0 mAdc, RBE = 10 ohms) Collector-Emitter Sustaining Voltage (IC=5.
0 mAdc, IB=0) Collector-Base Breakdown Voltage (IE = 0, IC = 0.
1 mAdc) Emitter-Base Breakdown Voltage (IE = 0.
1 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, IB = 0) Collector Cutoff Current (VCE = 55 Vdc, VBE = 1.
5 Vdc) DC Current Gain (IC = 360 mAdc, VCE = 5.
0 Vdc) Both (IC = 50 mAdc, VCE = 5.
0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.
0 Vdc) 2N3866A Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mAdc) 2N3866 / 2N3866A Value Min.
Typ.
Max.
Unit 55 - - Vdc 30 - - Vdc 55 - - Vdc 3.
5 - - Vdc - - 20 µA - - 100 µA 5.
0 - - - 10 - 200 - 25 - 200 - - - 1.
0 Vdc DYNAMIC Symbol Test Conditions fT COB Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) Output Capacitance (...


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