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2SK2569

Renesas
Part Number 2SK2569
Manufacturer Renesas
Description Silicon N-Channel MOSFET
Published Nov 4, 2013
Detailed Description 2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Feature...
Datasheet PDF File 2SK2569 PDF File

2SK2569
2SK2569

Overview
2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.
3.
00 Dec 27, 2006 Application High speed power switching Features • • • • Low on-resistance.
RDS(on) = 2.
6 Ω max.
(at VGS = 4 V, ID = 100 mA) 2.
5 V gate drive device.
Small package (MPAK).
Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 2 G 1.
Source 2.
Gate 3.
Drain S Note: Marking is "ZN–" Rev.
3.
00 Dec 27, 2006 page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ 2SK2569 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID ID(pulse)*1 Pch*2 Tch Tstg Ratings 50 ±20 0.
2 0.
4 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Note: 2.
Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 |yfs| Ciss Coss Crss td(on) tr td(off) tf Min 50 ±20 — — 0.
5 — — 0.
13 — — — — — — — Typ — — — — — 2.
0 3.
1 0.
23 14.
0 17.
2 1.
73 40 86 1120 430 Max — — 1.
0 ±2.
0 1.
5 2.
6 5.
0 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns Test Conditions ID = 100 µA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = 40 V, VGS = 0 VGS = ±16 V, VDS = 0 ID = 10 µA, VDS = 5 V ID = 100 mA, VGS = 4 V*2 ID = 40 mA, VGS = 2.
5 V*2 ID = 100 mA, VDS = 10 V VDS = 10 V, VGS = 0, f = 1 MHz VGS = 10 V, ID = 100 mA, RL = 300 Ω Rev.
3.
00 Dec 27, 2006 page 2 of 6 Free Datasheet http://www.
datasheet4u.
com/ 2SK2569 Main Characteristics Power vs.
Temperature Derating Maximum Safe Operation Area 1 1 ms 0.
3 150 Pc...


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