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2N3906

ON Semiconductor
Part Number 2N3906
Manufacturer ON Semiconductor
Description PNP General-Purpose Amplifier
Published Mar 23, 2005
Detailed Description 2N3906 General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collec...
Datasheet PDF File 2N3906 PDF File

2N3906
2N3906

Overview
2N3906 General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 40 40 5.
0 200 625 5.
0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Power Dissipation @ TA = 60°C PD 250 mW Total Device Dissipation @ TC = 25°C PD Derate above 25°C 1.
5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.
3 °C/W Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Condi...


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