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2N4124

Fairchild Semiconductor
Part Number 2N4124
Manufacturer Fairchild Semiconductor
Description NPN General Purpose Amplifier
Published Mar 23, 2005
Detailed Description 2N4124 / MMBT4124 Discrete POWER & Signal Technologies 2N4124 MMBT4124 C E C BE TO-92 SOT-23 Mark: ZC B NPN Gener...
Datasheet PDF File 2N4124 PDF File

2N4124
2N4124

Overview
2N4124 / MMBT4124 Discrete POWER & Signal Technologies 2N4124 MMBT4124 C E C BE TO-92 SOT-23 Mark: ZC B NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
Sourced from Process 23.
See 2N3904 for characteristics.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 25 30 5.
0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4124 625 5.
0 83.
3 200 Max *MMBT4124 350 2.
8 357 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.
6" X 1.
6" X 0.
06.
" © 1997 Fairchild Semiconductor Corporation 2N4124 / MMBT4124 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.
0 mA, IB = 0 I C = 10 µ A, IE = 0 I C = 10 µ A, IC = 0 VCB = 20 V, IE = 0 VEB = 3.
0 V, IC = 0 25 30 5.
0 50 50 V V V nA nA ON CHARACTERISTICS* hFE VCE(sat ) VBE( sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Sat...


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