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2SA940

Part Number	2SA940
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 14, 2013
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Ga...
Datasheet	2SA940 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.
5A ·Complement to Type 2SC2073 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier , vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -150 V -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1.
5 A 25 W 150 ℃ -55~1...

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