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HER806G

Taiwan Semiconductor
Part Number HER806G
Manufacturer Taiwan Semiconductor
Description (HER801G - HER808G) Glass Passivated High Efficient Rectifiers
Published Nov 21, 2013
Detailed Description HER801G - HER808G 8.0 AMPS. Glass Passivated High Efficient Rectifiers R-6 Features Glass passivated chip junction. Hig...
Datasheet PDF File HER806G PDF File

HER806G
HER806G


Overview
HER801G - HER808G 8.
0 AMPS.
Glass Passivated High Efficient Rectifiers R-6 Features Glass passivated chip junction.
High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.
Mechanical Data Case: Molded plastic Epoxy: UL 94V0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode High temperature soldering guaranteed: o 260 C/10 seconds/.
375”,(9.
5mm) lead lengths at 5 lbs.
, (2.
3kg) tension Mounting position: Any Weight: 1.
65 grams Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .
375 (9.
5mm) Lead Length o @TA = 55 C Peak Forward Surge Current, 8.
3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 8.
0A Maximum DC Reverse Current @TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance Operating Temperature Range ( Note 2 ) Symbol HER HER HER HER HER HER HER HER VRRM VRMS VDC I(AV) IFSM VF IR 1.
0 50 35 50 801G 802G 803G 804G 805G 806G 807G 808G Units V V V A 100 200 300 400 600 800 1000 70 140 210 280 420 560 700 100 200 300 400 600 800 1000 8.
0 150 1.
3 10 400 50 100 -65 to +150 -65 to +150 80 65 1.
7 A V uA uA nS pF o C o C Trr Cj TJ Storage Temperature Range TSTG 1.
Reverse Recovery Test Conditions: IF=0.
5A, IR=1.
0A, IRR=0.
25A Notes: 2.
Measured at 1 MHz and Applied Reverse Voltage of 4.
0 V D.
C.
Version: A06 Free Datasheet http://www.
datasheet4u.
com/ RATINGS AND CHARACTER...


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