DatasheetsPDF.com

2SA1193

Renesas
Part Number 2SA1193
Manufacturer Renesas
Description Silicon PNP Transistor
Published Nov 25, 2013
Detailed Description 2SA1193(K) Silicon PNP Epitaxial, Darlington REJ03G0641-0200 (Previous ADE-208-1013) Rev.2.00 Aug.10.2005 Application H...
Datasheet PDF File 2SA1193 PDF File

2SA1193
2SA1193

Overview
2SA1193(K) Silicon PNP Epitaxial, Darlington REJ03G0641-0200 (Previous ADE-208-1013) Rev.
2.
00 Aug.
10.
2005 Application High gain amplifier Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 2 1.
Emitter 2.
Collector 3.
Base 3 1 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –60 –60 –7 –0.
5 –1.
0 0.
9 150 –55 to +150 Unit V V V A A W °C °C Rev.
2.
00 Aug 10, 2005 page 1 of 5 Free Datasheet http://www.
datasheet4u.
com/ 2SA1193(K) Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1.
Pulse test Symbol V(BR)CEO ICBO IEBO hFE VCE(sat) VBE(sat) ton toff Min –60 — — 2000 — — — — Typ — — — — — — 0.
3 0.
9 Max — –1.
0 –1.
0 — –1.
5 –2.
0 — — Unit V µA µA V V µs µs Test conditions IC = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –250 mA*1 IC = –250 mA, IB = –0.
5 mA*1 IC = –250 mA IB1 = –IB2 = –0.
5 mA Rev.
2.
00 Aug 10, 2005 page 2 of 5 Free Datasheet http://www.
datasheet4u.
com/ 2SA1193(K) Main Characteristics Maximum Collector Dissipation Curve Collector power dissipation PC (W) 0.
9 –3 Area of Safe Operation PW Collector current IC (A) –1.
0 –0.
3 –0.
1 –0.
03 –0.
01 iC (peak) IC max t ho 1 s hot s ot ms ms 1 1 sh ms = 1W = 10 00 P =1 PW 0.
6 Ta = 25°C 0.
3 0 50 100 150 –0.
003 –3 –10 –30 –100 –300 Ambient Temperature Ta (°C) Collector to Emiter Voltage VCE (V) DC Current Transfer Ratio vs.
Collector Current 100,000 Typical Output Characteristics –500 00 –1 –80 0 –6 Collector current IC (mA) DC Current transfer ratio hFE –400 30,000 10,000 3,000 1,000 300 100 –10 Ta ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)