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2SC1472

Renesas
Part Number 2SC1472
Manufacturer Renesas
Description Silicon NPN Epitaxial Type Transistor
Published Nov 25, 2013
Detailed Description 2SC1472(K) Silicon NPN Epitaxial, Darlington REJ03G0688-0200 (Previous ADE-208-1054) Rev.2.00 Aug.10.2005 Application H...
Datasheet PDF File 2SC1472 PDF File

2SC1472
2SC1472


Overview
2SC1472(K) Silicon NPN Epitaxial, Darlington REJ03G0688-0200 (Previous ADE-208-1054) Rev.
2.
00 Aug.
10.
2005 Application High gain amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1.
Emitter 2.
Collector 3.
Base 3 2 1 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 40 30 10 300 500 500 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.
2.
00 Aug 10, 2005 page 1 of 5 Free Datasheet http://www.
datasheet4u.
com/ 2SC1472(K) Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CEO ICBO IEBO hFE1*1 hFE2*1 hFE3*1 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time VCE(sat) VBE(sat) fT Cob ton Min 30 — — 2000 3000 3000 — — 50 — — Typ — — — — — — — — — — 60 Max — 100 100 100000 — — 1.
5 2.
0 — 10 — V V MHz pF ns Unit V nA nA Test conditions IC = 1 mA, RBE = ∞ VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V (Pulse Test) IC = 400 mA, VCE = 5 V (Pulse Test) IC = 100 mA, IB = 0.
1 mA IC = 100 mA, IB = 0.
1 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 11 V IC = 100 IB1 = 100 mA IB2 = –IB1 Turn off time Storage time Note: hFE1 hFE2 hFE3 toff tstg — — 800 350 — — ns ns 1.
The 2SC1472(K) is grouped by hFE as follows.
A B 2000 to 100000 5000 to 100000 3000 min 10000 min 3000 min 10000 min Switching Time Test Circuit D.
U.
T.
6k 50 –6 V 6k 0.
002 – + 50 100 0.
002 – + 50 11 V Unit R : Ω C : µF 13 V Input 0 Output 0 CRT Response Waveform 90% 10% 90% 10% td ton tstg toff 90% 10% P.
G.
tr, tf ≤ 15 ns PW 10 µs duty ratio ≤ 10% Rev.
2.
00 Aug 10, 2005 page 2 of 5 Free Datasheet http...


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