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DB101S

Thinki Semiconductor
Part Number DB101S
Manufacturer Thinki Semiconductor
Description (DB101S - DB107S) 1.0 Ampere Surface Mount Glass Passivated Bridge Rectifier
Published Dec 27, 2013
Detailed Description DB101S thru DB107S ® DB101S thru DB107S Pb Free Plating Product Pb 1.0 Ampere Surface Mount Glass Passivated Bridge ...
Datasheet PDF File DB101S PDF File

DB101S
DB101S

Overview
DB101S thru DB107S ® DB101S thru DB107S Pb Free Plating Product Pb 1.
0 Ampere Surface Mount Glass Passivated Bridge Rectifier Features • Glass passivated chip junction • Low forward voltage drop • High surge overload rating of 50 A peak • Ideal for printed circuit board DB-S/DF-S Unit : inch (mm) .
060(1.
524) .
004(0.
10) .
011(0.
28) .
335(8.
51) .
316(8.
05) .
009(0.
25) .
255(6.
5) .
245(6.
2) .
410(10.
4) .
360(9.
40) Mechanical Data • Case: Molded plastic, DB-S/DF-S • Epoxy: UL 94V-0 rate flame retardant • Terminals: Leads solderable per MIL-STD-202, • Mounting position: Any .
205(5.
2) .
195(5.
0) .
045(1.
14) .
035(0.
89) Absolute Maximum Ratings and Characteristics Ratings at 25 OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter Symbols VRRM VRMS VDC I(AV) IFSM VF at TA = 25 C at TA = 125 OC O DB101S DB102S DB103S DB104S DB105S DB106S DB107S DF005S DF01S DF02S DF04S DF06S DF08S DF10S .
089(2.
5) .
086(2.
2) method 208 guaranteed .
310(7.
9) .
290(7.
4) .
040(1.
016) Unit Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TA = 40 OC Peak Forward Surge Current 8.
3 ms Single Half-sine-wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 1 A Maximum Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance 1) Typical Thermal Resistance Typical Thermal Resistance 2) 2) 50 35 50 100 70 100 200 140 200 400 280 400 1 50 1.
1 5 500 25 40 15 600 420 600 800 560 800 1000 700 1000 V V V A A V µA pF O IR CJ RθJA RθJL TJ ,TS C/W C/W O O Operating and Storage Temperature Range 1) 2) -55 to +150 C Measured at 1 MHz and applied reverse voltage of 4 V Thermal resistance from junction to ambient and from junction to lead mounted on P.
C.
B with 0.
5 X 0.
5" (13 X 13 mm) copper pads.
Page 1/2 © 2006 Thinki Semiconductor Co.
,Ltd.
http://www.
thinkis...


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