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ES3B

Taiwan Semiconductor
Part Number ES3B
Manufacturer Taiwan Semiconductor
Description Surface Mount Super-Fast Rectifiers
Published Dec 28, 2013
Detailed Description ES3A – ES3J Taiwan Semiconductor 3A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● Glass passivated chip ju...
Datasheet PDF File ES3B PDF File

ES3B
ES3B


Overview
ES3A – ES3J Taiwan Semiconductor 3A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● Glass passivated chip junction ● Ideal for automated placement ● Super fast recovery time for high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● High frequency rectification ● Freewheeling application ● Switching mode converters and inverters in computer, and telecommunication.
KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 3 A 50 - 600 V IFSM TJ MAX Package 100 A 150 °C DO-214AB (SMC) Configuration Single die MECHANICAL DATA ● Case: DO-214AB (SMC) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.
210g (approximately) DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J UNIT Marking code on the device ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J Repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Reverse voltage, total rms value VR(RMS) 35 70 105 140 210 280 350 420 V Forward current IF Peak forward surge current, 8.
3ms single half sine-wave IFSM superimposed on rated load Junction temperature TJ 3 A 100 A - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: N2102 ES3A – ES3J Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance SYMBOL RӨJL RӨJA TYP 12 47 UNIT °C/W °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage(1) Reverse current @ rated VR(2) Junction capacitance Reverse recovery time Notes: 1.
Pulse test with PW = 0.
3ms 2.
Pulse test with PW = 30ms ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J CONDITIONS IF = 3A, TJ = 25°C T...


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