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2SB772

Part Number	2SB772
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistors
Published	Jan 2, 2014
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -3A ·High Collector-Emitter Breakdown Voltage...
Datasheet	2SB772 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -3A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD882 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in the output stage of 3 watts audio amp- lifier, voltage regulator, DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -7 A 10 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB772 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB772 ELECTRICAL CHARACTER...

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