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K3498

Toshiba Semiconductor
Part Number K3498
Manufacturer Toshiba Semiconductor
Description 2SK3498
Published Jan 26, 2014
Detailed Description 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3498 DC-DC Converter, Relay Drive and Mo...
Datasheet PDF File K3498 PDF File

K3498
K3498

Overview
2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 4.
0 Ω (typ.
) High forward transfer admittance: Yfs = 0.
6 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 400 V) Enhancement-model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 400 400 ±30 1 3 20 113 1 2 150 −55 to150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) JEDEC JEITA TOSHIBA ― SC-64 2-7B1B Weight: 0.
36 g (typ.
) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.
25 125 Unit °C/W °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 183 mH, RG = 25 Ω, IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.
36 g (typ.
) 1 2002-02-27 Free Datasheet http://www.
datasheet4u.
com/ 2SK3498 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd V...


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