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B1412

Rohm
Part Number B1412
Manufacturer Rohm
Description 2SB1412
Published Feb 3, 2014
Detailed Description Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2...
Datasheet PDF File B1412 PDF File

B1412
B1412

Overview
Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat).
VCE(sat) = −0.
35V (Typ.
) (IC/IB = −4A / −0.
1A) 2) Excellent DC current gain characteristics.
3) Complements the 2SD2118.
zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO −30 Collector-emitter voltage VCEO −20 Emitter-base voltage VEBO −6 Collector current −5 IC −10 Collector power dissipation 2SB1412 PC 1 10 Junction temperature Tj 150 Storage temperature Tstg −55 to 150 ∗1 Single pulse, Pw=10ms Unit V V V A(DC) A(Pulse) ∗1 W W(Tc=25°C) °C °C zElectrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emitter cutoff current IEBO Collector-emitter saturation voltage VCE(sat) DC current transfer ratio Transition frequency hFE fT Output capacitance ∗ Measured using pulse current.
Cob Min.
−30 −20 −6 − − − 82 − − Typ.
− − − − − 0.
35 − 120 60 Max.
− − − −0.
5 −0.
5 −1.
0 390 − − Unit V V V µA µA V − MHz pF Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −5V IC/IB= −4A/ −0.
1A VCE= −2V, IC= −0.
5A ∗ ∗ VCE= −6V, IE=50mA, f=100MHz VCB= −20V, IE=0A, f=1MHz www.
rohm.
com ○c 2009 ROHM Co.
, Ltd.
All rights reserved.
1/3 2009.
12 - Rev.
C 2SB1412 zPackaging specifications and hFE Package Taping Code TL Type Basic ordering hFE unit (pieces) 2500 2SB1412 PQR hFE values are classified as follows : Item P Q R hFE 82 to 180 120 to 270 180 to 390 zElectrical characteristic curves −10 −5 VCE= −2V COLLECTOR CURRENT : IC (A) −2 −1 −500m Ta=100°C 25°C −25°C −200m −100m −50m −20m −10m −5m −2m −1m 0 −0.
2 −0.
4 −0.
6 −0.
8 −1.
0 −1.
2 −1.
4 BASE TO EMITTER VOLTAGE : VBE (V) Fig.
1 Grounded emitter propagation ...


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