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HGTP12N60D1

Intersil Corporation
Part Number HGTP12N60D1
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Featu...
Datasheet PDF File HGTP12N60D1 PDF File

HGTP12N60D1
HGTP12N60D1

Overview
HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss www.
DataSheet4U.
com Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
Terminal Diagram N-CHANNEL ENHANCEMENT MODE C The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY PART NUMBER HGTP12N60D1 PACKAGE TO-220AB BRAND G12N60D1 G E Absolute Maximum Ratings TC = +25oC, Unless Otherw...


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