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D4016

Ponit Nine
Part Number D4016
Manufacturer Ponit Nine
Description GOLD METALIZED SILICON DMOS RF FET
Published Feb 18, 2014
Detailed Description POIN T NINE Te c h n o l o g i e s , Inc. D4016 TetraFET 65W - 28V - 1GHz GOLD METALIZED SILICON DMOS RF FET FEATURES ...
Datasheet PDF File D4016 PDF File

D4016
D4016


Overview
POIN T NINE Te c h n o l o g i e s , Inc.
D4016 TetraFET 65W - 28V - 1GHz GOLD METALIZED SILICON DMOS RF FET FEATURES • METAL GATE • • • • • EXTRA LOW Crss BROAD BAND SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN (TCASE = 25°C unless otherwise stated) PD BVDSS VGSS ID Tstg Tj RØj-c Power Dissipation Drain-source breakdown voltage Gate-source voltage Drain Current Storage temperature Maximum operating junction temperature Thermal resistance junction-case 207W 60V ±20V 16A -65 to 150°C 200°C Max.
.
85°C/W ABSOLUTE MAXIMUM RATINGS APPLICATIONS • HF/VHF/UHF COMMUNICATIONS ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated) Parameter BVDSS IDSS IGSS VGS(th) gfs Ciss Coss Crss Breakdown voltage, drain source Drain leakage current Gate leakage current Gate threshold voltage Transconductance (300µs pulse) Input capacitance Output capacitance Reverse transfer capacitance Test Conditions PER SIDE VGS=0 ID=100mA VDS=28V VGS=0 VGS=20V VDS=0 ID=10mA VDS=VGS VDS=10V ID=1.
4A VDS=0 VDS=0 VDS=0 VGS=-0 VGS=0 VGS=0 f=1MHz f=1MHz f=1MHz Min.
Typ.
Max.
60 60 60 2 1 5 Unit Vdc mAdc µAdc Vdc Mhos pF pF pF 1 1.
4 96 40 4.
0 GPS η VSWR Common source power gain Drain efficiency Load mismatch tolerance TOTAL DEVICE PO =65W VDS=28V IDQ=1.
6A f=1GHz 10 40 20:1 dB % DIMENSIONS C E DM A B C D E F G H I J K M N O P Millimeter 15.
24 10.
77 45° 9.
78 5.
71 27.
94 1.
52R 10.
16 22.
22 0.
13 2.
16 1.
52 5.
08 34.
04 1.
57R TOL .
50 .
13 .
05 .
13 .
13 .
13 .
13 .
13 MAX .
02 .
13 .
13 .
50 .
13 .
08 Inches .
750 .
424 45° .
385 .
255 1.
100 .
060R .
400 .
875 .
005 .
I07 .
060 .
200 1.
340 .
062R TOL .
020 .
005 5° .
005 .
005 .
005 .
005 .
005 MAX .
001 .
005 .
005 .
020 .
005 .
003 HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide.
Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
G A H D P B I F J N K M O U.
S.
PAT...



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