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BD501B

Part Number	BD501B
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistors
Published	Feb 18, 2014
Detailed Description	isc Silicon NPN Power Transistors BD501/B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V...
Datasheet	BD501B PDF File

Overview

isc Silicon NPN Power Transistors BD501/B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD501 55 VCBO Collector-Base Voltage V BD501B 85 BD501 50 VCEO Collector-Emitter Voltage V BD501B 80 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Ra...

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