DatasheetsPDF.com

K365

Toshiba Semiconductor
Part Number K365
Manufacturer Toshiba Semiconductor
Description 2SK365
Published Feb 26, 2014
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Curr...
Datasheet PDF File K365 PDF File

K365
K365

Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK365 Unit: mm · High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.
0 nA (max) (VGS = −30 V) · Low RDS (ON): RDS (ON) = 80 Ω (typ.
) (IDSS = 5 mA) · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 200 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1C Weight: 0.
13 g (typ.
) Characteristics Symbol T...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)