DatasheetsPDF.com

A489

SavantIC
Part Number A489
Manufacturer SavantIC
Description 2SA489
Published Apr 22, 2014
Detailed Description CSD18531Q5A www.ti.com SLPS321A – JUNE 2012 – REVISED JUNE 2012 60V N-Channel NexFET™ Power MOSFETs Check for Samples: ...
Datasheet PDF File A489 PDF File

A489
A489

Overview
CSD18531Q5A www.
ti.
com SLPS321A – JUNE 2012 – REVISED JUNE 2012 60V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18531Q5A 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.
5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 60 18 5.
9 VGS = 4.
5V VGS = 10V 1.
8 4.
4 3.
5 UNIT V nC nC mΩ mΩ V • • • • • • • • 2 ORDERING INFORMATION APPLICATIONS • • • DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control Device CSD18531Q5A Package SON 5-mm × 6-mm Plastic Package Media 13-Inch Reel Qty 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID = 67A, L = 0.
1mH, RG = 25Ω PD TJ, TSTG EAS VALUE 60 ±20 100 134 19 122 3.
1 –55 to 150 224 A W °C mJ A UNIT V V DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Figure 1.
Top View S 1 8 D S 2 7 D S 3 D 6 D G 4 5 D P0093-01 (1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz.
Cu pad on a 0.
06inch thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2% GATE CHARGE 10 VGS - Gate-to-Source Voltage (V) 12 RDS(on) - On-State Resistance - mΩ 10 8 6 4 2 0 RDS(on) vs VGS TC = 25°C Id = 22A TC = 125ºC Id = 22A ID = 22A VDS = 30V 8 6 4 2 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage - V 18 20 G001 0 0 5 10 15 20 25 Qg - Gate Charge - nC (nC) 30 33 G001 1 2 Pleas...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)