Search by part number and manufacturer or description
File Size : 231.34KB
TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhanceme.
⎯ SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test.
Similar Product
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | K5A65D |
Toshiba |
TK5A65D |
|
| 2 | K5A2 |
ITT Industries |
Snap Action Key Switch Switch |
|
| 3 | K5A3240YBC-T755 |
Samsung semiconductor |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
|
| 4 | K5A3240YBC-T855 |
Samsung semiconductor |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
|
| 5 | K5A3240YT |
Samsung semiconductor |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
|