DatasheetsPDF.com

ESDALC6V1Px

STMicroelectronics
Part Number ESDALC6V1Px
Manufacturer STMicroelectronics
Description Low capacitance Transil arrays
Published May 9, 2014
Detailed Description ESDALC6V1Px Datasheet Low capacitance Transil arrays for ESD protection SOT-665 1 SOT-666IP ESDALC6V1P5 1 ESDALC6V1P...
Datasheet PDF File ESDALC6V1Px PDF File

ESDALC6V1Px
ESDALC6V1Px


Overview
ESDALC6V1Px Datasheet Low capacitance Transil arrays for ESD protection SOT-665 1 SOT-666IP ESDALC6V1P5 1 ESDALC6V1P6 Product status link ESDALC6V1Px Features • 4 unidirectional Transil functions • Breakdown voltage VBR = 6.
1 V min • Low leakage current < 100 nA • Low diode capacitance (7.
5 pF at 3 V) • UL94, V0 • RoHS package • Complies with the following standards – IEC 61000-4-2 (exceeds level 4) 20 kV (air discharge) 8 kV (contact discharge) – MIL STD 883E - Method 3015-7: class 3 25 kV HBM (human body model) Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: • Computers • Printers • Communication systems • Set-top boxes Description These devices are monolithic suppressors designed to protect components connected to data and transmission lines against ESD.
They clamp the voltage just above the logic level supply for positive transients and to a diode drop below ground for negative transients.
DS4887 - Rev 10 - May 2019 For further information contact your local STMicroelectronics sales office.
www.
st.
com ESDALC6V1Px Characteristics 1 Characteristics Symbol VPP PPP Tstg Tj TL Top Table 1.
Absolute maximum ratings (Tamb = 25 °C) Parameter Peak pulse voltage Peak pulse power Storage temperature range IEC 61000-4-2: Contact discharge Air discharge MIL STD 883G - method 3015-7: Class3 8/20μs, Tj initial = Tamb Junction temperature range Maximum lead temperature for soldering during 10 s Operating temperature range Value Unit 8 kV 20 25 30 W -55 to +150 -40 to +150 °C 260 -40 to +150 Figure 1.
Electrical characteristics (definitions) Symbol VBR = VCL = IRM = IF = IPP = IR = VF = C = Rd = αT = Parameter Breakdown voltage Clamping voltage Leakage current Forward current Peak pulse current Breakdown current Forward voltage drop Capacitance Dynamic impedance Voltage temperature I IF VBR Vcl VRM VF V IRM Slope = 1/Rd IPP Order code ESDALC6V1P5 ESDALC6V1P6 Table 2.
E...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)